Title :
Proposal and realisation of new type distributed reflector laser with multiquantum-well structure
Author :
Shim, J.I. ; Nomaguchi, T. ; Kudo, K. ; Arai, Shigehisa
Author_Institution :
Dept. of Electron., Tokyo Inst. of Technol., Japan
fDate :
4/9/1992 12:00:00 AM
Abstract :
A new type distributed reflector (DR) laser, which uses the multiquantum-well (MQW) waveguide as both the active and passive distributed reflector, is proposed and realised. Its superior lasing characteristics are experimentally confirmed by introducing GaxIn1-xAs-GaInAsP compressive strained MQW layers; the characteristics include a narrow linewidth of 743 kHz, high submode suppression-ratio (SMSR) of >41 dB at 2.2 times the threshold, and about two times larger differential quantum efficiency eta df than that of DFB lasers.
Keywords :
distributed Bragg reflector lasers; integrated optics; optical waveguides; semiconductor junction lasers; spectral line breadth; Ga xIn 1-xAs-GaInAsP; active reflector; compressive strained MQW layers; differential quantum efficiency; distributed reflector laser; linewidth; multiquantum-well structure; passive reflector; submode suppression-ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920469
