Title :
Dependence of radiation induced damage on gate oxide thickness in MOS capacitors with ultrathin gate oxides
Author :
Joshi, A.B. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
4/9/1992 12:00:00 AM
Abstract :
The effect of scaling down gate oxide thickness on radiation induced damage in MOS capacitors with sub-10 nm gate oxides is reported. The trend of reduction in radiation induced positive charge and interface state generation is observed to continue for these ultrathin gate oxides. Results show that neutral trap generation due to radiation exposure is negligible in sub-10 nm gate oxides.
Keywords :
capacitors; electron traps; hole traps; interface electron states; metal-insulator-semiconductor devices; radiation effects; semiconductor-insulator boundaries; 10 micron; MOS capacitors; gate oxide thickness; interface state generation; neutral trap generation; radiation exposure; radiation induced damage; radiation induced positive charge; ultrathin gate oxides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920471
