• DocumentCode
    1091020
  • Title

    Interaction of cobalt and field oxide during low temperature furnace annealing

  • Author

    Chen, Bor-Sen ; Chen, M.-C.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    28
  • Issue
    8
  • fYear
    1992
  • fDate
    4/9/1992 12:00:00 AM
  • Firstpage
    756
  • Lastpage
    758
  • Abstract
    The interaction of cobalt and thermally grown field oxide (5000 AA) during low temperature furnace annealing (600-800 degrees C) is described. It is found that the isolation function of oxide becomes unreliable and s-pit clusters form in the silicon substrate when the annealing temperature exceeds 700 degrees C. Therefore, it is essential to limit the first annealing temperature of the selfaligned silicide scheme below 600 degrees C.
  • Keywords
    annealing; cobalt; semiconductor technology; silicon compounds; 5000 AA; 600 to 800 degC; Co-SiO 2-Si; CoSi 2; field oxide; isolation function; low temperature furnace annealing; s-pit clusters; selfaligned silicide scheme; thermally grown oxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920478
  • Filename
    133117
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091020