• DocumentCode
    1091075
  • Title

    Bipolar-mode Schottky contact and applications to high-speed diodes

  • Author

    Amemiya, Yoshihito ; Mizushima, Yoshihiko

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
  • Volume
    31
  • Issue
    1
  • fYear
    1984
  • fDate
    1/1/1984 12:00:00 AM
  • Firstpage
    35
  • Lastpage
    42
  • Abstract
    A Schottky contact operation combined with minority-carrier transport, a concept of bipolar-mode Schottky contacts, is proposed. There are two bipolar-mode Schottky contacts. One acts as a minority-carrier injector causing conductivity modulation without excessive carrier accumulation, while the other operates as an ideal ohmic contact to conduct minority carriers without accumulation. Applicationally, these contacts are utilized to improve conventional Schottky diodes and p-n diodes, respectively and a high-voltage Schottky diode (BSBD) and a fast-recovery p-n diode (quasi-LLD) can then be realized.
  • Keywords
    Conductivity; Detectors; Microwave devices; Ohmic contacts; P-n junctions; Schottky barriers; Schottky diodes; Semiconductor diodes; Telegraphy; Telephony;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21471
  • Filename
    1483756