DocumentCode
1091075
Title
Bipolar-mode Schottky contact and applications to high-speed diodes
Author
Amemiya, Yoshihito ; Mizushima, Yoshihiko
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan
Volume
31
Issue
1
fYear
1984
fDate
1/1/1984 12:00:00 AM
Firstpage
35
Lastpage
42
Abstract
A Schottky contact operation combined with minority-carrier transport, a concept of bipolar-mode Schottky contacts, is proposed. There are two bipolar-mode Schottky contacts. One acts as a minority-carrier injector causing conductivity modulation without excessive carrier accumulation, while the other operates as an ideal ohmic contact to conduct minority carriers without accumulation. Applicationally, these contacts are utilized to improve conventional Schottky diodes and p-n diodes, respectively and a high-voltage Schottky diode (BSBD) and a fast-recovery p-n diode (quasi-LLD) can then be realized.
Keywords
Conductivity; Detectors; Microwave devices; Ohmic contacts; P-n junctions; Schottky barriers; Schottky diodes; Semiconductor diodes; Telegraphy; Telephony;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21471
Filename
1483756
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