DocumentCode :
1091108
Title :
A better understanding of CMOS latch-up
Author :
Hu, Genda J.
Author_Institution :
Xerox Palo Alto Research Center, Palo Alto, CA
Volume :
31
Issue :
1
fYear :
1984
fDate :
1/1/1984 12:00:00 AM
Firstpage :
62
Lastpage :
67
Abstract :
Both lumped-element two-transistor circuit model and two-dimensional finite-element analyses are used to study the latch-up phenomena in CMOS structures. The equivalent circuit model offers a simple view on latch-up, while 2-D modeling provides more physics and quantitative understanding of latch-up. A generalized criterion for p-n-p-n latch-up is derived based on the equivalent circuit. 2-D modeling confirms the latch-up triggering condition described by the criterion. Furthermore, 2-D simulation models the entire latch-up process, including the dynamic triggering stage, and determines the intrinsic steady-state I - V characteristics of p-n-p-n devices.
Keywords :
Circuit simulation; Equivalent circuits; Finite element methods; Inverters; Physics; Predictive models; Resistors; Semiconductor device modeling; Steady-state; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21474
Filename :
1483759
Link To Document :
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