Chemically etched-mirror GaInAsP/InP lasers - Review

Author

Iga, Kenichi ; Miller, Barry I.

Author_Institution

Tokyo Institute of Technology, Yokohama, Japan

Volume

18

Issue

1

fYear

1982

fDate

1/1/1982 12:00:00 AM

Firstpage

22

Lastpage

29

Abstract

Detailed results on stripe GaxIn1-xAsyP1-y/InP lasers ( $\\lambda = 1.3 \\mu$ m) with chemically etched-mirrors are reviewed. These devices are fabricated from GaInAsP/InP wafers grown by liquid phase epitaxy. A simple stripe laser structure with one etched mirror and one cleaved mirror is proposed. Monolithic passivation has been achieved using a Si3N4film and metal coatings on the etched facets. These processes not only increase the reflectivity of the etched mirrors, resulting in threshold currents even lower than uncoated cleaved devices, but also ease the problem of bonding of the chips on heat sinks. CW operation at room temperature has been achieved. Threshold currents of devices with 10 μm stripe electrodes were about 180-200 mA. Short cavity lasers and integrated monitoring detectors have also been demonstrated.

Keywords

Gallium materials/lasers; Laser resonators; Chemical lasers; Coatings; Epitaxial growth; Etching; Indium phosphide; Mirrors; Optical films; Passivation; Semiconductor films; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1982.1071382

Filename

1071382