• DocumentCode
    1091207
  • Title

    Breakdown voltage design considerations in VDMOS structures

  • Author

    Mena, José G. ; Salama, C. Andre T

  • Author_Institution
    University of Toronto, Toronto, Canada
  • Volume
    31
  • Issue
    1
  • fYear
    1984
  • fDate
    1/1/1984 12:00:00 AM
  • Firstpage
    109
  • Lastpage
    113
  • Abstract
    Analytical closed-form expressions for the breakdown voltage in punched-through VDMOS structures, including the effect of floating guardrings and field plates, are derived in this paper. The theoretical results are confirmed by measured data on VDMOS devices, as well as on floating-guardring diode test structures, fabricated on n/n+epitaxial substrates.
  • Keywords
    Avalanche breakdown; Breakdown voltage; Closed-form solution; Diodes; Doping profiles; Equations; Ionization; Substrates; Sun; Testing;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21483
  • Filename
    1483768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091207