DocumentCode
1091243
Title
A method of analyzing the induced current profiles obtained on a Schottky diode at normal irradiation
Author
Donolato, C.
Author_Institution
Instituto di Chimica e Tecnologia dei Materialie dei Componenti Per 1´´Eletronica, Bologna, Italy
Volume
31
Issue
1
fYear
1984
fDate
1/1/1984 12:00:00 AM
Firstpage
121
Lastpage
123
Abstract
A new method is proposed to determine the minority-carrier diffusion length of a semiconductor from the induced current profiles which are obtained by scanning an electron or light beam with normal incidence on a Schottky diode, The method is based on the evaluation of the first-order moment about the origin of the normalized profile and should be especially useful when current data at large scan distances are not available.
Keywords
Current measurement; Data mining; Electron beams; Electron devices; Length measurement; P-n junctions; Performance evaluation; Scanning electron microscopy; Schottky diodes;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21485
Filename
1483770
Link To Document