Title :
A method of analyzing the induced current profiles obtained on a Schottky diode at normal irradiation
Author_Institution :
Instituto di Chimica e Tecnologia dei Materialie dei Componenti Per 1´´Eletronica, Bologna, Italy
fDate :
1/1/1984 12:00:00 AM
Abstract :
A new method is proposed to determine the minority-carrier diffusion length of a semiconductor from the induced current profiles which are obtained by scanning an electron or light beam with normal incidence on a Schottky diode, The method is based on the evaluation of the first-order moment about the origin of the normalized profile and should be especially useful when current data at large scan distances are not available.
Keywords :
Current measurement; Data mining; Electron beams; Electron devices; Length measurement; P-n junctions; Performance evaluation; Scanning electron microscopy; Schottky diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21485
