• DocumentCode
    1091255
  • Title

    Comments on "A method for determining energy gap narrowing in highly doped semiconductors"

  • Author

    Del Alamo, Jesus A. ; Swanson, Richard M.

  • Author_Institution
    Stanford Electronics Laboratories, Stanford, CA
  • Volume
    31
  • Issue
    1
  • fYear
    1984
  • Firstpage
    123
  • Lastpage
    124
  • Abstract
    The narrow temperature range used by Neugroschel et al. [1] in their determination of bandgap shrinkage in heavily doped Si leads them to overestimate this parameter by neglecting its temperature dependence. Appropriate manipulation of their data results in values in better agreement with literature.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21486
  • Filename
    1483771
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091255