• DocumentCode
    1091496
  • Title

    An experimental method for the determination of the saturation point of a MOSFET

  • Author

    Booth, Richard V H ; White, Marvin H.

  • Author_Institution
    Lehigh University, Bethlehem, PA
  • Volume
    31
  • Issue
    2
  • fYear
    1984
  • fDate
    2/1/1984 12:00:00 AM
  • Firstpage
    247
  • Lastpage
    251
  • Abstract
    This paper presents an extraction technique which determines the drain voltages and currents at saturation directly from experimental data. The technique makes use of both drain current and conductance data. In addition to VDSSand IDSS, parameters for the characterization of the saturation region of operation may be extracted via this technique.
  • Keywords
    CMOS digital integrated circuits; Data mining; MOSFET circuits; Operational amplifiers; P-n junctions; Power amplifiers; Power dissipation; Predictive models; Semiconductor device modeling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21508
  • Filename
    1483793
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091496