Title :
An experimental method for the determination of the saturation point of a MOSFET
Author :
Booth, Richard V H ; White, Marvin H.
Author_Institution :
Lehigh University, Bethlehem, PA
fDate :
2/1/1984 12:00:00 AM
Abstract :
This paper presents an extraction technique which determines the drain voltages and currents at saturation directly from experimental data. The technique makes use of both drain current and conductance data. In addition to VDSSand IDSS, parameters for the characterization of the saturation region of operation may be extracted via this technique.
Keywords :
CMOS digital integrated circuits; Data mining; MOSFET circuits; Operational amplifiers; P-n junctions; Power amplifiers; Power dissipation; Predictive models; Semiconductor device modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21508
