Single transverse mode condition of lens-like strip waveguide GaInAsP/InP lasers

Author

Moriki, Kazunori ; Iga, Kenichi

Author_Institution

Tokyo Institute of Techonology, Research Laboratory of Precision Machinery and Electronics, Nazatsuta, Midoriku, Yokohama, Japan

Volume

18

Issue

10

fYear

1982

fDate

10/1/1982 12:00:00 AM

Firstpage

1696

Lastpage

1703

Abstract

The theoretical analysis of the single transverse mode condition and lasing properties of a lens-like strip GaInAsP/InP laser is described. First, extended rate equations have been derived which include the carrier diffusion in the active layer and the carrier spread in the cladding layer and the dependency of the carrier lifetime on the current density. Next, it has been shown that the reasonably good assumption that the field of a lasing mode is determined by the built-in index waveguide is effective for simplifying to solve these equations. The result on lasing properties from the theory has been compared with experiments which were made on GaInAsP/InP( $\\lambda = 1.3 \\mu$ m) lens-like strip and terraced substrate lasers. In addition, the single transverse mode condition is discussed and criteria have been obtained.

Keywords

Gallium materials/lasers; Laser modes; Optical strip waveguides; Waveguide lasers; Charge carrier density; Charge carrier lifetime; Equations; Indium phosphide; Laser modes; Laser stability; Laser theory; Strips; Waveguide lasers; Waveguide theory;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1982.1071418

Filename

1071418