Title :
InGaAsP laser with high T0
Author :
Dutta, N.K. ; Wright, P.D. ; Nelson, R.J. ; Wilson, R.B. ; Besomi, P.R.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
fDate :
10/1/1982 12:00:00 AM
Abstract :
We report measured T0values as high as 127 K for 1.3 μm InGaAsP buried heterostructure lasers. An analysis of the electrical characteristics of high T0lasers indicates the presence of shunt leakage currents. The actual T0of the current flowing through the active layer junction is shown to be 70 ± 10 K. The observed reduction in threshold temperature sensitivity may be useful in some applications.
Keywords :
Gallium materials/lasers; Laser thermal factors; Current measurement; DH-HEMTs; Electric variables; Leakage current; Light sources; Shunt (electrical); Temperature dependence; Temperature measurement; Temperature sensors; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1982.1071430
