• DocumentCode
    1091634
  • Title

    InGaAsP laser with high T0

  • Author

    Dutta, N.K. ; Wright, P.D. ; Nelson, R.J. ; Wilson, R.B. ; Besomi, P.R.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    18
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    1414
  • Lastpage
    1416
  • Abstract
    We report measured T0values as high as 127 K for 1.3 μm InGaAsP buried heterostructure lasers. An analysis of the electrical characteristics of high T0lasers indicates the presence of shunt leakage currents. The actual T0of the current flowing through the active layer junction is shown to be 70 ± 10 K. The observed reduction in threshold temperature sensitivity may be useful in some applications.
  • Keywords
    Gallium materials/lasers; Laser thermal factors; Current measurement; DH-HEMTs; Electric variables; Leakage current; Light sources; Shunt (electrical); Temperature dependence; Temperature measurement; Temperature sensors; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1982.1071430
  • Filename
    1071430
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091634