Theory of amorphous-silicon charge-coupled devices

The theory of operation of amorphous-silicon charge-coupled devices has been studied numerically and analytically under the assumption that the localized states in amorphous-silicon are distributed exponentially with respect to energy. The transfer inefficiency ε is found to depend not only on the localized state density but also on the transit time and initial density of signal electrons. The approximate analysis shows that is a linear function of logarithmic clock frequency, and that its coefficient is given by the characteristic temperature which represents the steepness of the localized state density distribution in amorphous-silicon.