DocumentCode :
1091700
Title :
Auger recombination in quantum-well InGaAsP heterostructure lasers
Author :
Chiu, L.C. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, CA 91125
Volume :
18
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
1406
Lastpage :
1409
Abstract :
Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of T0at around room temperatures.
Keywords :
Gallium materials/lasers; Laser thermal factors; Gallium arsenide; Indium phosphide; Lattices; Light emitting diodes; Power lasers; Quantum well lasers; Radiative recombination; Stimulated emission; Temperature sensors; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1982.1071437
Filename :
1071437
Link To Document :
بازگشت