Title :
A p-channel coupled delta-doped silicon MESFET grown by molecular beam epitaxy
Author :
Wang, S.J. ; Wu, S.L. ; Chung, H.D. ; Carns, T.K. ; Zheng, X. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/1994 12:00:00 AM
Abstract :
Experimental realization of a new p-channel Si MESFET structure, utilizing two boron /spl delta/-doped layers placed in close proximity with one another as the conducting channel, is reported for the first time. This simple homoepitaxially grown Si structure exhibits not only higher sheet carrier density but also higher hole mobility than those of a single /spl delta/-doped layer. The measured transconductance of the device is 1.44 mS/mm at 300 K with a gate length of 5 μm, which is a factor of 1.7 higher than the single /spl delta/-doped layer Si MESFET for the same dose in each /spl delta/-doped layer.
Keywords :
Schottky gate field effect transistors; boron; carrier mobility; doping profiles; elemental semiconductors; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; silicon; 1.44 mS/mm; 5 micron; B /spl delta/-doped layers; Si MESFET structure; Si:B; delta-doped Si; hole mobility; homoepitaxially grown Si structure; molecular beam epitaxy; p-channel device; sheet carrier density; transconductance; Boron; Charge carrier density; FETs; MESFETs; Molecular beam epitaxial growth; Optical coupling; Semiconductor device doping; Silicon; Temperature; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
