• DocumentCode
    1091780
  • Title

    Low field mobility in GaAs ion-implanted FET´s

  • Author

    Lee, Kahyun ; Shur, Michael S. ; Lee, Kahyun ; Vu, Tuong Thuy ; Roberts, P.C.T. ; Helix, M.J.

  • Author_Institution
    University of Minnesota, Minneapolis, MN
  • Volume
    31
  • Issue
    3
  • fYear
    1984
  • fDate
    3/1/1984 12:00:00 AM
  • Firstpage
    390
  • Lastpage
    393
  • Abstract
    We describe a new technique which allows one to deduce the mobility profiles under the gate of an ion-implanted GaAs MESFET. The technique is based on the measurements of the transconductance and the series resistance at very low drain-to-source voltages. The experimental results show that the mobility drops to about 1000 cm2/V . s at the channel interface from its maximum value of about 2500 cm2/ V . s.
  • Keywords
    Doping profiles; Electrical resistance measurement; Equivalent circuits; FETs; Fabrication; Gallium arsenide; Government; Low voltage; MESFETs; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21537
  • Filename
    1483822
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091780