Title :
Current-voltage characteristics of thin-film SOI MOSFET´s in strong inversion
Author :
Lim, Hyung-Kyu ; Fossum, Jerry G.
Author_Institution :
University of Florida, Gainesville, FL
fDate :
4/1/1984 12:00:00 AM
Abstract :
A simple analytic model for the steady-state current-voltage characteristics of strongly inverted silicon-on-insulator (SOI) MOSFET´s is developed. The model, simplified by a key approximation that the inversion charge density is described well by a linear function of the Surface potential, clearly shows the dependence of the drain current on the device parameters and on the terminal voltages, including the back-gate (substrate) bias. The analysis is supported by measurements of current-voltage characteristics of thin-film (laser-recrystallized) SOI MOSFET´s. The dependence of carrier mobility on the terminal voltages, especially the back-gate bias, is analyzed and shown to underlie discrepancies between the theoretical (constant mobility) and experimental results at high gate voltages. The mobility dependence on the back-gate bias enhances the strong influence of the back gate on the drain current, especially when the device is saturated.
Keywords :
Current-voltage characteristics; Doping; MOSFET circuits; Semiconductor films; Semiconductor process modeling; Silicon on insulator technology; Steady-state; Substrates; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21540