Title :
2-D characterization of dynamic charge distribution in MOS controlled thyristors: experiment and simulation
Author :
Lendenmann, H. ; Fichtner, W. ; Rosling, M. ; Bleichner, H. ; Nordlander, E.
Author_Institution :
Inst. fur Integrierte Syst., Swiss Federal Inst. of Technol., Zurich, Switzerland
fDate :
6/1/1994 12:00:00 AM
Abstract :
The MOS-controlled thyristor (MCT) is well suited for very high power applications. The maximum capability of turn-off currents for p-channel MCT´s was so far limited to low values (<10 A at 1000 V snubberless switching) due to strong sublinear current scaling with respect to the device area. In this letter we investigate this phenomenon by full device scale transient carrier distribution measurements and simulations. For the first time the degradation of the switching performance for highly structured and shorted base MOS thyristors is related by measurement to an inhomogeneous current distribution in the device during switching. These measurements confirm predictions of the effect by device simulation.<>
Keywords :
current distribution; metal-insulator-semiconductor devices; semiconductor device models; semiconductor switches; simulation; thyristors; 2D characterization; MOS controlled thyristors; device simulation; dynamic charge distribution; full device scale measurements; high power applications; inhomogeneous current distribution; p-channel MCT; shorted base MOS device; switching performance; transient carrier distribution measurements; turnoff currents; Charge carrier density; Current density; Current distribution; Current measurement; Degradation; Insulated gate bipolar transistors; MOSFETs; Semiconductor optical amplifiers; Thyristors; Time measurement;
Journal_Title :
Electron Device Letters, IEEE
