DocumentCode :
1091818
Title :
Method for determining the emitter and base series resistances of bipolar transistors
Author :
Ning, Tak H. ; Tang, Denny D.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume :
31
Issue :
4
fYear :
1984
fDate :
4/1/1984 12:00:00 AM
Firstpage :
409
Lastpage :
412
Abstract :
A simple method for determining both the emitter and the base series resistances of bipolar transistors from the measured I - V characteristics is described. The method is based on the observation that deviation of the base current from the ideal 
behavior at high currents can be attributed solely and relatively simply to series resistances. Series resistances determined by this method are given for sample high-speed digital bipolar transistors.
behavior at high currents can be attributed solely and relatively simply to series resistances. Series resistances determined by this method are given for sample high-speed digital bipolar transistors.Keywords :
Bipolar transistor circuits; Bipolar transistors; Capacitance measurement; Circuit optimization; Conductivity; Contact resistance; Electrical resistance measurement; Parasitic capacitance; Scalability; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21541
Filename :
1483826
Link To Document :
