DocumentCode :
1091845
Title :
Proton damage in GaAs solar cells
Author :
Wilson, John W. ; Walker, Gilbert H. ; Outlaw, R.A.
Author_Institution :
NASA Langley Research Center, Hampton, VA
Volume :
31
Issue :
4
fYear :
1984
fDate :
4/1/1984 12:00:00 AM
Firstpage :
421
Lastpage :
422
Abstract :
A simplified model for the short-circuit current reduction caused by proton-induced radiation damage is described. The model accounts for the nonuniformity of defect production within heteroface GaAs shallow junction solar cells. The results from the model show agreement with the strong energy dependence observed in proton radiation damage experiments.
Keywords :
Electrons; Gallium arsenide; NASA; Nuclear electronics; Photovoltaic cells; Production; Protons; Scattering; Spontaneous emission; Thumb;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21544
Filename :
1483829
Link To Document :
بازگشت