• DocumentCode
    1091855
  • Title

    Channel potential and channel width in narrow buried-channel MOSFET´s

  • Author

    Burkey, Bruce C. ; Lubberts, Gerrit ; Trabk, Eugene A. ; Tredwell, Timothy J.

  • Author_Institution
    Eastman Kodak Company, Rochester, NY
  • Volume
    31
  • Issue
    4
  • fYear
    1984
  • fDate
    4/1/1984 12:00:00 AM
  • Firstpage
    423
  • Lastpage
    429
  • Abstract
    A new method is described for determining the effective width over which incremental charge spreads in a narrow buried-channel transistor. The method is based on the transconductance in the buried-channel mode. Experimental results for effective widths and channel potential shifts are presented for MOSFET´s with effective channel widths from 2 to 10 µm. Two-dimensional numerical calculations verify the experimental results.
  • Keywords
    Charge coupled devices; Charge transfer; Doping; FETs; MOSFET circuits; Scanning electron microscopy; Silicon; Threshold voltage; Transconductance; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21545
  • Filename
    1483830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1091855