DocumentCode
1091889
Title
Monolithically integrated 2*2 InGaAsP/InP laser amplifier gate switch arrays
Author
Janson, M. ; Lundgren, L. ; Rask, M. ; Stoltz, B. ; Gustavsson, M. ; Thylen, Lars
Author_Institution
Ericsson Components AB, Kista, Sweden
Volume
28
Issue
8
fYear
1992
fDate
4/9/1992 12:00:00 AM
Firstpage
776
Lastpage
778
Abstract
Monolithically integrated 2*2 semiconductor laser amplifier gate switch arrays have been fabricated and evaluated. Net positive chip gain, high extinction ratio, and high electrical isolation between the integrated laser amplifiers are reported.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical communication equipment; semiconductor laser arrays; InGaAsP-InP; electrical isolation; extinction ratio; integrated laser amplifiers; integrated optoelectronics; net positive chip gain; semiconductor laser amplifier gate switch arrays;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920490
Filename
133129
Link To Document