High-efficiency ion-implanted silicon solar cells

The development of solar cells with AM1 coversion efficiency of 18 percent is reported. The cells comprise an n⁺-p-p⁺structure fabricated from float zone silicon having resistivity of 0.3 Ω . cm. The n⁺and p⁺regions are formed by low energy ion implantation and thermal annealing. An important feature of cell fabrication is the growth of SiO2passivation for reduction of surface recombination velocity. Details of both cell fabrication and testing are reported.