DocumentCode :
1092100
Title :
High-efficiency ion-implanted silicon solar cells
Author :
Spitzer, Mark B. ; Tobin, Stephen P. ; Keavney, Christopher J.
Author_Institution :
Spire Corporation, Bedford, MA
Volume :
31
Issue :
5
fYear :
1984
fDate :
5/1/1984 12:00:00 AM
Firstpage :
546
Lastpage :
550
Abstract :
The development of solar cells with AM1 coversion efficiency of 18 percent is reported. The cells comprise an n+-p-p+structure fabricated from float zone silicon having resistivity of 0.3 Ω . cm. The n+and p+regions are formed by low energy ion implantation and thermal annealing. An important feature of cell fabrication is the growth of SiO2passivation for reduction of surface recombination velocity. Details of both cell fabrication and testing are reported.
Keywords :
Annealing; Coatings; Conductivity; Fabrication; Ion implantation; P-n junctions; Passivation; Photovoltaic cells; Silicon; Testing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21567
Filename :
1483852
Link To Document :
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