Minority-carrier lifetime measurements on silicon solar cells using Iscand Voctransient decay

Measurements of the transient decay of short-circuit current and open-circuit voltage of solar cells provide sufficient information, in principle, to determine both the effective back-surface recombination velocity S and the base minority-carrier lifetime τ. The practical use of the method is illustrated by an example, and the technique is applied to a variety of cells. Analysis of the effect of different cell thickness on the measurement is included. Finally, some limitations, both fundamental and experimental, are discussed.