DocumentCode :
1092151
Title :
The effect of dynamic design processing for yield enhancement in the fabrication of deep sub-micron MOSFET´s
Author :
Sitte, Renate ; Dimitrijev, Sima ; Harrison, H.Barry
Author_Institution :
Sch. of Microelectron. Eng., Griffith Univ., Nathan, Qld., Australia
Volume :
7
Issue :
1
fYear :
1994
fDate :
2/1/1994 12:00:00 AM
Firstpage :
92
Lastpage :
96
Abstract :
With the downscaling of microelectronic devices, tighter process control and more elaborate fabrication equipment need to be complemented by process correcting techniques if good quality and high yields are to be expected. Dynamic design processing-a forward correcting technique by which some recipe values are recalculated during manufacturing-is such a technique. In this paper the effect of dynamic design processing on deep sub-micron MOSFET´s is presented. The results show that a parametric yield improvement in excess of 25% over conventional manufacturing can be achieved
Keywords :
digital simulation; insulated gate field effect transistors; semiconductor process modelling; deep sub-micron MOSFET; dynamic design processing; forward correcting technique; parametric yield improvement; process correcting techniques; recipe values; yield enhancement; Circuit simulation; Current measurement; Fabrication; Fluctuations; Manufacturing processes; Microelectronics; Process control; Process design; Software systems; Threshold voltage;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.286837
Filename :
286837
Link To Document :
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