DocumentCode :
1092185
Title :
Performance of In0.53 Ga0.47 As/InP avalanche photodiodes
Author :
Forrest, Stephen R. ; Smith, Richard G. ; Kim, Ock Ky
Author_Institution :
Bell Lab., Murray Hill, NJ, USA
Volume :
18
Issue :
12
fYear :
1982
fDate :
12/1/1982 12:00:00 AM
Firstpage :
2040
Lastpage :
2048
Abstract :
We calculate operating characteristics of high-sensitivity high-speed In0.53 Ga0.47 As/InP avalanche photodiodes (APD\´s). We find that significant photocurrent gain is obtained for a total fixed-charge density of 
cm-2in the depleted InP and0.53 Ga0.47 As regions. To obtain high quantum efficiency and low tunneling currents, the fixed-charge density in the InP must be in the range 
cm-2 
cm-2. We calculate the breakdown voltages for APD\´s with uniformly doped layers and find that practical detectors with avalanche breakdowns as low as 15 V can be realized. High quantum efficiency and fast response are obtained by compositional grading of the In0.53 Ga0.47 As heterointerface over a distance of 
Å, depending on the doping and amount of the In0.53 Ga0.47 As layer swept out at breakdown. Finally, a comparison of calculations with experimental results is presented.
cm-2in the depleted InP and cm-2 cm-2. We calculate the breakdown voltages for APD\´s with uniformly doped layers and find that practical detectors with avalanche breakdowns as low as 15 V can be realized. High quantum efficiency and fast response are obtained by compositional grading of the In Å, depending on the doping and amount of the InKeywords :
Avalanche photodiodes; Optical fiber receivers; Avalanche photodiodes; Dark current; Detectors; Doping; Electric breakdown; Fabrication; Indium phosphide; Optical fiber communication; Photonic band gap; Tunneling;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1982.1071478
Filename :
1071478
Link To Document :
