DocumentCode :
1092203
Title :
Limiting factors for the application of crystalline upgraded metallurgical grade silicon
Author :
Schlosser, Vikitor
Author_Institution :
Ludwig Boltzmann Institut für Festkörperphysik, Wien, Austria
Volume :
31
Issue :
5
fYear :
1984
fDate :
5/1/1984 12:00:00 AM
Firstpage :
610
Lastpage :
613
Abstract :
Differently processed upgraded metallurgical grade silicon (UMG-Si) has been used to produce planar diffused solar cells. The results obtained from these cells were used to evaluate the limiting factors governing the conversion efficiency in UMG-Si-cells. The present state of practical cell processing was taken into account for the discussion of the potential of new technologies. For conventionally processed cells on UMG-Si having a planar junction, it appears that a conversion efficiency of about 13 percent under AM1.5 conditions (incident light intensity = 1 kWm-2, T= 27°C) cannot be exceeded. Experimentally a conversion efficiency of 10.5 percent was obtained.
Keywords :
Costs; Crystalline materials; Crystallization; Current density; Grain boundaries; Lighting; Photonic crystals; Photovoltaic cells; Silicon; Solar power generation;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21576
Filename :
1483861
Link To Document :
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