• DocumentCode
    1092203
  • Title

    Limiting factors for the application of crystalline upgraded metallurgical grade silicon

  • Author

    Schlosser, Vikitor

  • Author_Institution
    Ludwig Boltzmann Institut für Festkörperphysik, Wien, Austria
  • Volume
    31
  • Issue
    5
  • fYear
    1984
  • fDate
    5/1/1984 12:00:00 AM
  • Firstpage
    610
  • Lastpage
    613
  • Abstract
    Differently processed upgraded metallurgical grade silicon (UMG-Si) has been used to produce planar diffused solar cells. The results obtained from these cells were used to evaluate the limiting factors governing the conversion efficiency in UMG-Si-cells. The present state of practical cell processing was taken into account for the discussion of the potential of new technologies. For conventionally processed cells on UMG-Si having a planar junction, it appears that a conversion efficiency of about 13 percent under AM1.5 conditions (incident light intensity = 1 kWm-2, T= 27°C) cannot be exceeded. Experimentally a conversion efficiency of 10.5 percent was obtained.
  • Keywords
    Costs; Crystalline materials; Crystallization; Current density; Grain boundaries; Lighting; Photonic crystals; Photovoltaic cells; Silicon; Solar power generation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21576
  • Filename
    1483861