Frequency response of top-gated carbon nanotube field-effect transistors

Author

Singh, Dinkar V. ; Jenkins, Keith A. ; Appenzeller, J. ; Neumayer, D. ; Grill, Alfred ; Wong, H. S Philip

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

3

Issue

3

fYear

2004

Firstpage

383

Lastpage

387

Abstract

The ac performance of carbon nanotube field-effect transistors (CNFETs) has been characterized using two approaches involving: 1) time- and 2) frequency-domain measurements. A high input impedance measurement system was used to demonstrate time-domain switching of CNFETs at frequencies up to 100 kHz. The low level of signal crosstalk in CNFETs fabricated on quartz substrates enabled frequency-domain measurements of the ac response of CNFETs in the megahertz range, over five orders of magnitude higher in frequency than previously reported ac measurements of CNFET devices.

Keywords

Schottky gate field effect transistors; carbon nanotubes; electric impedance measurement; frequency response; nanotube devices; semiconductor device measurement; Al₂O₃; C; ac performance; carbon nanotube field-effect transistors; frequency response; frequency-domain measurement; high input impedance measurement system; quartz substrates; signal crosstalk; time-domain measurement; time-domain switching; CNTFETs; Carbon nanotubes; Charge carrier processes; Current measurement; FETs; Frequency measurement; Frequency response; Scattering; Time domain analysis; Time measurement; AC measurement; CN; carbon nanotube; high frequency;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2004.828577

Filename

1331328