DocumentCode :
1092309
Title :
Frequency response of top-gated carbon nanotube field-effect transistors
Author :
Singh, Dinkar V. ; Jenkins, Keith A. ; Appenzeller, J. ; Neumayer, D. ; Grill, Alfred ; Wong, H. S Philip
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
3
Issue :
3
fYear :
2004
Firstpage :
383
Lastpage :
387
Abstract :
The ac performance of carbon nanotube field-effect transistors (CNFETs) has been characterized using two approaches involving: 1) time- and 2) frequency-domain measurements. A high input impedance measurement system was used to demonstrate time-domain switching of CNFETs at frequencies up to 100 kHz. The low level of signal crosstalk in CNFETs fabricated on quartz substrates enabled frequency-domain measurements of the ac response of CNFETs in the megahertz range, over five orders of magnitude higher in frequency than previously reported ac measurements of CNFET devices.
Keywords :
Schottky gate field effect transistors; carbon nanotubes; electric impedance measurement; frequency response; nanotube devices; semiconductor device measurement; Al2O3; C; ac performance; carbon nanotube field-effect transistors; frequency response; frequency-domain measurement; high input impedance measurement system; quartz substrates; signal crosstalk; time-domain measurement; time-domain switching; CNTFETs; Carbon nanotubes; Charge carrier processes; Current measurement; FETs; Frequency measurement; Frequency response; Scattering; Time domain analysis; Time measurement; AC measurement; CN; carbon nanotube; high frequency;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2004.828577
Filename :
1331328
Link To Document :
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