Rad-Hard Silicon Diode Response for Photon Spectrometry

Author

Goncalves, J.A.C. ; Camargo, F. ; Fraga, M.M.R. ; Pinto, J.K.C. ; Bueno, C.C.

Author_Institution

Instituto de Pesquisas Energeticas e Nucleares, IPEN-CNEN/SP, Sao Paulo

Volume

54

Issue

1

fYear

2007

Firstpage

276

Lastpage

279

Abstract

In this Paper we describe the performance of a rad-hard diode (Al/p⁺/n/n⁺/Al), developed in the framework of research and development programs for the future CMS experiment at LHC, for detection and spectrometry of X-and gamma-rays envisaging its use in characterization of porous structures by X-ray tomography. The diode´s response was studied using ⁵⁷Co, ¹³³Ba, and ²⁴¹Am radioactive sources at room temperature. A reasonable good energy resolution was obtained in the energy range between 30 and 360 keV (FWHM=5.2 keV and 5.7 keV, respectively). In the same energy range, measurements of full-energy peak efficiencies were carried out and compared with the theoretical values. For 59.5 keV photons the angular dependence of the efficiency was also measured. The results have demonstrated that this diode is appropriate for direct detection of low energy electromagnetic radiation

Keywords

X-ray detection; americium; barium; cobalt; gamma-ray detection; porous materials; silicon radiation detectors; tomography; 293 to 298 K; ¹³³Ba; ²⁴¹Am; ⁵⁷Co; CMS experiment; LHC; X-ray detection; X-ray spectrometry; X-ray tomography; gamma-ray detection; low energy electromagnetic radiation; microtomography; photon spectrometry; porous structures; rad-hard silicon diode response; room temperature; Collision mitigation; Diodes; Electromagnetic measurements; Gamma ray detection; Gamma ray detectors; Large Hadron Collider; Radiation hardening; Research and development; Silicon; Spectroscopy; Microtomography; X-ray spectrometry; rad-hard silicon detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.887856

Filename

4089145