• DocumentCode
    1092465
  • Title

    The influence of surface charge and bevel angle on the blocking behavior of a high-voltage p+-n-n+device

  • Author

    Brieger, K.-P. ; Gerlach, Willi ; Pelka, Joachim

  • Author_Institution
    Technische Universitat Berlin, Berlin, West Germany
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • fDate
    6/1/1984 12:00:00 AM
  • Firstpage
    733
  • Lastpage
    738
  • Abstract
    The breakdown voltage of p+-n-n+devices is investigated. The two-dimensional Poisson equation is solved using the finite difference method. The questions of optimal bevelling and the influence of surface charges on the blocking capability are extensively studied. Furthermore, it is investigated to replace a small bevel angle at the n+- region by a mesa-like structure.
  • Keywords
    Breakdown voltage; Dielectrics; Doping profiles; Helium; Laplace equations; P-n junctions; Permittivity; Poisson equations; Surface treatment; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21600
  • Filename
    1483885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1092465