• DocumentCode
    1092670
  • Title

    A new self-aligned recessed-gate InP MESFET

  • Author

    Cheng, C.L. ; Coldren, Larry A. ; Miller, B.I. ; Liao, Andrew S.H. ; Leheny, R.F. ; Lalevic, B.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, NJ
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • fDate
    6/1/1984 12:00:00 AM
  • Firstpage
    840
  • Lastpage
    841
  • Abstract
    We describe a new self-aligned recessed-gate InP MESFET. In this structure, material selective and anisotropic etching properties of InP/InGaAsP system are utilized to alleviate the difficulties associated with channel recess and gate alignment. Using this technique a 1-µm Al-gate InP MESFET with a transconductance ∼ 110 mS/mm is demonstrated.
  • Keywords
    Anisotropic magnetoresistance; Epitaxial growth; Etching; FETs; Fabrication; Indium phosphide; MESFETs; Monitoring; Substrates; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21617
  • Filename
    1483902
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1092670