• DocumentCode
    1092678
  • Title

    Stripe geometry InP/InGaAsP lasers fabricated with deuteron bombardment

  • Author

    Schwartz, B. ; Focht, M.W. ; Dutta, N.K. ; Nelson, R.J. ; Besomi, P.R.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ
  • Volume
    31
  • Issue
    6
  • fYear
    1984
  • fDate
    6/1/1984 12:00:00 AM
  • Firstpage
    841
  • Lastpage
    843
  • Abstract
    Stripe geometry gain-guided InP/InGaAsP lasers have reproducibly been fabricated with deuteron bombardment. Good electrical isolation was observed in 250-µm-long laser chips, and CW thresholds as low as 105 mA have been achieved.
  • Keywords
    Doping; Electron devices; Epitaxial growth; Etching; Geometrical optics; Indium phosphide; MESFETs; Semiconductor device noise; Semiconductor lasers; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21618
  • Filename
    1483903
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1092678