• DocumentCode
    1092739
  • Title

    Breakdowns in Si JFET´s

  • Author

    Sakai, Tatsuo ; Sakina, Yasuaki ; Hane, Kunio ; Suzuk, Tokio

  • Author_Institution
    Keio University, Yokohama, Japan
  • Volume
    31
  • Issue
    7
  • fYear
    1984
  • fDate
    7/1/1984 12:00:00 AM
  • Firstpage
    873
  • Lastpage
    879
  • Abstract
    A two-dimensional numerical analysis to clarify the breakdown phenomena in Si n-type JFET is described. In this analysis, the continuity equation for minority carriers is introduced to consider the effect of avalanche multiplication. The heat conduction equation is also taken into account to include the thermal effect on the breakdown voltage. The results obtained are: 1) the mechanisms of excess gate current (EGC), current-mode second breakdown (CSB), and thermal-mode second breakdown (TSB). 2) The effects of how channel impurity concentration Nc, drain current ID, and applied drain voltage VDGaffect EGC, CSB, and TSB are also reported.
  • Keywords
    Breakdown voltage; Charge carrier processes; Degradation; Delay effects; Electric breakdown; Electron mobility; Impedance; Impurities; Poisson equations; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21624
  • Filename
    1483909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1092739