• DocumentCode
    1092755
  • Title

    Multikilovolt picosecond optoelectronic switching in CdS0.5Se0.5

  • Author

    Mathur, Veerendra K. ; Chang, C.S. ; Cao, Wei-Lou ; Rhee, M.J. ; Lee, Chi H.

  • Author_Institution
    University of Maryland, College Park, MD, USA
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • fDate
    2/1/1982 12:00:00 AM
  • Firstpage
    205
  • Lastpage
    209
  • Abstract
    Multikilovolt optoelectronic switching is reported in CdS0.5Se0.5. Two schemes are proposed for this purpose and their relative merits are discussed. CdS0.5Se0.5can hold a dc bias of a little more than 2 kV. Limitations of the device under high dc bias are explained in terms of combined effect of carrier injection and thermal runaway.
  • Keywords
    Cadmium materials/devices; Electrooptic switches; Conductivity; Cryogenics; Gallium arsenide; Impact ionization; Kinetic energy; Optical scattering; Pulse shaping methods; Silicon; Switches; Temperature;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1982.1071525
  • Filename
    1071525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1092755