• DocumentCode
    1093020
  • Title

    Double-diffusion differential-amplification magnetic sensor

  • Author

    Huang, Rei-Min ; Yeh, Fon-Shan ; Huang, Ruey-Shing

  • Author_Institution
    National Tsing Hua University, Taiwan, Republic of China
  • Volume
    31
  • Issue
    7
  • fYear
    1984
  • fDate
    7/1/1984 12:00:00 AM
  • Firstpage
    1001
  • Lastpage
    1004
  • Abstract
    A double-diffused differential-amplification magnetic sensor (D2DAMS) composed of a rectangular Hall device and two transistors has been designed and fabricated. The dependence of the output signals on magnetic field was analyzed theoretically. The fabricated D2DAMS was found to have magnetic sensitivity of 62 mV/T with load resistance of 10 kΩ when exposed to static magnetic fields. Decreasing the dopant concentration in the Hall region and increasing the resistance between the differential transistor collectors are proposed to improve the sensitivity up to 10 V/T.
  • Keywords
    Boundary conditions; Conformal mapping; Counting circuits; Doping profiles; Electron devices; Iterative methods; Magnetic fields; Magnetic materials; Magnetic sensors; Poisson equations;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21648
  • Filename
    1483933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1093020