Title :
Drain bias dependence of the frequency limit of GaAs FET´s
Author :
Hak Lee, Soong ; Dawson, Dale E. ; Dickens, Lawrence E.
Author_Institution :
Westinghouse Electric Company, Baltimore, MD
fDate :
8/1/1984 12:00:00 AM
Abstract :
Microwave fTmeasurements were made and compared to a model that confirmed lateral spreading as proposed by Wemple et al. to explain the increased breakdown voltage of GaAs power FET´s compared to bulk breakdown. The model provides a useful tool for device diagnosis as well as evaluation of the frequency limit fT.
Keywords :
Breakdown voltage; Charge measurement; Current measurement; Electrodes; FETs; Frequency measurement; Gain measurement; Gallium arsenide; Helium; Microwave measurements;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21662
