DocumentCode :
1093207
Title :
A new open diffusion technique using evaporated Zn3P2and its application to a lateral p-n-p transistor
Author :
Schmitt, Felix ; Man Su, Li ; Franke, Dieter ; Kaumanns, R. ; Kaumanns, Roland
Author_Institution :
Heinrich-Hertz-Institut für Nachrichtentechnik Berlin, Germany
Volume :
31
Issue :
8
fYear :
1984
fDate :
8/1/1984 12:00:00 AM
Firstpage :
1083
Lastpage :
1085
Abstract :
This paper reports a new open diffusion technique with a thin vacuum-deposited Zn3P2layer covered by an Al2O3layer. The diffusion in
Keywords :
Crystals; Degradation; Diffusion processes; Etching; Indium phosphide; Optical devices; P-n junctions; Temperature; Vacuum technology; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1984.21665
Filename :
1483950
Link To Document :
بازگشت