Title :
Impact of thermal NH3-nitridation on dielectric properties of ultrathin SiO2 films
Author :
Fukuda, Hiroshi ; Yasuda, Makoto ; Iwabuchi, T.
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fDate :
4/9/1992 12:00:00 AM
Abstract :
The dielectric properties of rapid thermally NH3-nitrided (RTN) ultrathin ( approximately=5 nm) SiO2 films have been investigated. High-field endurance characteristics indicate that after Fowler-Nordheim electron injection, both the low-field leakage current and electron trap density increase. Moreover, the oxide leakage is strongly dependent on the NH3-nitridation time. These results indicate that in ultrathin SiO2 the oxide leakage is a result of trap-assisted tunnelling, leading to a breakdown event when a critical trap density is reached.
Keywords :
dielectric properties of solids; electron traps; insulating thin films; metal-insulator-semiconductor devices; nitridation; tunnelling; Fowler-Nordheim electron injection; NH 3; SiO 2; breakdown event; critical trap density; dielectric properties; electron trap density; endurance characteristics; low-field leakage current; oxide leakage; thermal nitridation; trap-assisted tunnelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920502
