Breakdown voltage optimization of silicon p-π-v planar junction diodes

Design considerations for optimizing the high-voltage capability of a planar silicon p-π-ν diode structure are studied by computer-aided numerical similation. The effect of varying the π-region width and doping concentration are investigated. An optimum field plate design is determined. The reduction of breakdown voltage due to Qssis calculated. Accurate avalanche breakdown prediction is accomplished by solving the Poisson charge and electron and hole current continuity equations. The values found are a few percent smaller than those obtained by only solving the Poisson equation and then calculating the ionization integral. Discrepancies with previously reported avalanche breakdown calculations and measured data are discussed.