• DocumentCode
    1093449
  • Title

    Significant photodiode quantum efficiency improvement and spectral response alteration through surface effects in vacuum

  • Author

    Kopeika, N.S. ; Hava, Shlomo ; Hirsh, Isreal ; Hazout, Eli

  • Author_Institution
    Ben-Gurion University of the Negev, Beer-Sheva, Israel
  • Volume
    31
  • Issue
    9
  • fYear
    1984
  • fDate
    9/1/1984 12:00:00 AM
  • Firstpage
    1198
  • Lastpage
    1206
  • Abstract
    Surface effects stemming simply from photodiode operation in vacuum environment are seen to improve quantum efficiency significantly. This is attributed to desorption of surface impurities and consequent reduction of surface recombination and Debye length. Effective depletion layer width, because of junction shallowness, can also be noticeably affected by changes in surface potential and free charge redistribution stemming from desorption of surface impurities. Quantum efficiency enhancement here in vacuum is greatest at visible wavelengths, thus suggesting application in solar cell technology, particularly since Isc, Voc, and fill factor are all increased in vacuum.
  • Keywords
    Electrons; Elementary particle vacuum; Passivation; Photodiodes; Radiative recombination; Reflectivity; Response surface methodology; Solid modeling; Solid state circuits; Vacuum technology;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1984.21688
  • Filename
    1483973