Author :
Nosaeva, K. ; Weimann, N. ; Rudolph, M. ; John, W. ; Krueger, O. ; Heinrich, W.
Abstract :
In this article, researchers from FBH Germany present an InP DHBT design incorporating a thin-film diamond layer that can cut the thermal resistance of a DHBT by around 75%. Diamond films provide a way to more than double the power output achievable with terahertz gap transistors. The films are used to provide better heat management in InP DHBTs for more reliable and higher power operation, using a process compatible with existing transistor production technologies.
Keywords :
diamond; heterojunction bipolar transistors; semiconductor device packaging; submillimetre wave transistors; thermal management (packaging); thin films; C; DHBT design; InP; diamond film; double heterojunction bipolar transistor; terahertz gap transistor; thermal resistance; thin film diamond layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2015.1943
