Title :
Use of Sn-doped GaAs for non-alloyed ohmic contacts to HEMTs
Author :
Ren, F. ; Cho, A.Y. ; Sivco, D.L. ; Pearton, S.J. ; Abernathy, C.R.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
5/26/1994 12:00:00 AM
Abstract :
Segregation of Sn to the surface of MBE grown n+-GaAs layers allows fabrication of non-alloyed Ti/Pt/Au, Al or Ti/W ohmic contacts with low specific contact resistivities (1.1×10-6 Ω·cm-2). These contacts were used to realise high performance HEMTs (gm=230 mS/mm for 1.0 μm gate length) in which Si is used as the dopant in the donor AlGaAs layer and Sn is employed in the GaAs contact layer
Keywords :
electrical conductivity; gallium arsenide; high electron mobility transistors; ohmic contacts; segregation; tin; 1 mum; Al; AlGaAs; Au; GaAs contact layer; GaAs:Sn; HEMTs; MBE grown; Pt; Si; Ti; Ti/Pt/Au ohmic contacts; Ti/W ohmic contacts; W; gate length; high performance HEMTs; low specific contact resistivities; n+-GaAs layers; nonalloyed ohmic contacts;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940599
