DocumentCode
1093647
Title
Electrical characterisation of Ti Schottky barriers can n-type GaN
Author
Binari, S.C. ; Dietrich, H.B. ; Kelner, G. ; Rowland, L.B. ; Doverspike, K. ; Gaskill, D. Kurt
Author_Institution
Naval Res. Lab., Washington, DC
Volume
30
Issue
11
fYear
1994
fDate
5/26/1994 12:00:00 AM
Firstpage
909
Lastpage
911
Abstract
The Schottky barrier height of Ti on n-type GaN has been measured to be 0.58 and 0.59 eV by capacitance-voltage and current-voltage techniques, respectively. This work is of particular interest because it is the first measure of the Schottky barrier height on GaN for a metal other than Au. The barrier height of Ti on GaN is significantly less than that of Au. This supports the prediction that the Fermi level is not pinned at the GaN surface
Keywords
Fermi level; Schottky-barrier diodes; semiconductor device testing; titanium; 0.58 eV; 0.59 eV; Fermi level; GaN; GaN surface; Schottky barrier height measurement; Ti; Ti Schottky barriers; capacitance-voltage techniques; current-voltage techniques; electrical characterisation; n-type GaN;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19940565
Filename
287440
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