Title :
Electrical characterisation of Ti Schottky barriers can n-type GaN
Author :
Binari, S.C. ; Dietrich, H.B. ; Kelner, G. ; Rowland, L.B. ; Doverspike, K. ; Gaskill, D. Kurt
Author_Institution :
Naval Res. Lab., Washington, DC
fDate :
5/26/1994 12:00:00 AM
Abstract :
The Schottky barrier height of Ti on n-type GaN has been measured to be 0.58 and 0.59 eV by capacitance-voltage and current-voltage techniques, respectively. This work is of particular interest because it is the first measure of the Schottky barrier height on GaN for a metal other than Au. The barrier height of Ti on GaN is significantly less than that of Au. This supports the prediction that the Fermi level is not pinned at the GaN surface
Keywords :
Fermi level; Schottky-barrier diodes; semiconductor device testing; titanium; 0.58 eV; 0.59 eV; Fermi level; GaN; GaN surface; Schottky barrier height measurement; Ti; Ti Schottky barriers; capacitance-voltage techniques; current-voltage techniques; electrical characterisation; n-type GaN;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940565
