DocumentCode :
1093657
Title :
Avalanche breakdown in (AlxGa1x)0.52 In0.48P pin junctions
Author :
David, J.P.R. ; Hopkinson, Mark ; Pate, M.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ.
Volume :
30
Issue :
11
fYear :
1994
fDate :
5/26/1994 12:00:00 AM
Firstpage :
907
Lastpage :
909
Abstract :
The avalanche breakdown behaviour of (AlxGa1-x )0.52In0.48P has been investigated by growing a series of pin diode structures and by measuring the reverse leakage currents until the onset of avalanche breakdown. Comparing the breakdown voltage (Vbd) with that of GaAs, significant increases are obtained, with AlInP having in excess of twice the Vbd of GaAs
Keywords :
III-V semiconductors; aluminium compounds; avalanche diodes; gallium compounds; indium compounds; leakage currents; p-i-n diodes; semiconductor junctions; (AlxGa1x)0.52In0.48P pin junctions; AlGaInP; avalanche breakdown; breakdown voltage; pin diode structures; reverse leakage currents;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940620
Filename :
287441
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1093657
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