Title :
1 W/mm power pseudomorphic HFET with optimised recess technology
Author :
Gaquiere, Christopher ; Theron, Didier ; Bonte, B. ; Crosnier, Y.
Author_Institution :
IEMN, Villeneuve d´Ascq
fDate :
5/26/1994 12:00:00 AM
Abstract :
The authors report record DC characteristics and RF performance of a power double heterostructure (DH) pseudomorphic (PM) InGaAs quantum well HFET. The device, with a 0.3×70 μm2 gate, exhibits an intrinsic transconductance as high as 720 mS/mm, a maximum current density of ~1 A/mm and delivers a state-of-the-art output power density of 1 W/mm with 5.7 dB linear gain and 38% power added efficiency at 33 GHz. A detailed analysis of the technological aspects and electrical characteristics of the device is proposed to explain these excellent performances
Keywords :
III-V semiconductors; current density; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; semiconductor quantum wells; 33 GHz; 38 percent; 5.7 dB; InGaAs; RF performance; electrical characteristics; intrinsic transconductance; linear gain; maximum current density; optimised recess technology; power added efficiency; power double heterostructure pseudomorphic InGaAs quantum well HFET; power pseudomorphic HFET; record DC characteristics; state-of-the-art output power density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940593
