Title :
Thermo-optical switching in Si/Si1-xGex distributed Bragg reflectors
Author :
Fernando, C. ; Janz, Siegfried ; Normandin, R. ; Wight, Jim S.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont.
fDate :
5/26/1994 12:00:00 AM
Abstract :
The authors report thermo-optical switching in a 92 layer Si/Si 0.7Ge0.3 distributed Bragg reflector (DBR) grown by molecular beam epitaxy. Depending on the layer periodicity, this structure exhibited a positive or negative reflectivity switching λ=1.06 μm, with a switch-on time of less than 20 ns and reflectivity contrast ratios greater than 50%
Keywords :
Ge-Si alloys; elemental semiconductors; integrated optics; mirrors; molecular beam epitaxial growth; optical switches; semiconductor growth; semiconductor materials; silicon; thermoreflectance; 1.06 micron; 20 ns; Si-SiGe; Si/Si1-xGex heterostructure; distributed Bragg reflectors; molecular beam epitaxy; reflectivity contrast ratios; thermo-optical switching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940617
