Title :
Strain-compensated MQW electroabsorption modulator for increased optical power handling
Author :
Gibbon, M.A. ; Thompson, G.H.B. ; Greene, P.D. ; Smith, A.D. ; Silver, M.
fDate :
5/26/1994 12:00:00 AM
Abstract :
InGaAsP MQW electroabsorption modulators with compressive strain in the wells and tensile strain in the barriers provide easier escape of photogenerated holes and operate at higher intensities before suffering saturation. Hole escape from wells is enhanced by a reduced energy difference between heavy-hole states in the well and light-hole states in the barrier
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; semiconductor quantum wells; InGaAsP; heavy-hole states; light-hole states; optical power handling; photogenerated hole escape; saturation; strain-compensated MQW electroabsorption modulator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940614
