DocumentCode
1093710
Title
Instabilities in MODFET´s and MODFET circuits
Author
Duh, K.H. ; Zhu, X.C. ; Der Ziel, Van A. ; Morkoç, Hadis
Author_Institution
University of Minnesota, Minneapolis, MN
Volume
31
Issue
9
fYear
1984
fDate
9/1/1984 12:00:00 AM
Firstpage
1345
Lastpage
1346
Abstract
We report some instability phenomena of modulation-doped field effect transistors (MODFET´s). It can be caused by traps or by high-frequency oscillations. By the improvement of technology to reduce the trap density and careful circuit layout we can reduce the noise level in the high drain voltage region.
Keywords
Density estimation robust algorithm; Frequency; Grounding; HEMTs; Hysteresis; MODFET circuits; Noise level; Noise measurement; Semiconductor device noise; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21712
Filename
1483997
Link To Document