Title :
Instabilities in MODFET´s and MODFET circuits
Author :
Duh, K.H. ; Zhu, X.C. ; Der Ziel, Van A. ; Morkoç, Hadis
Author_Institution :
University of Minnesota, Minneapolis, MN
fDate :
9/1/1984 12:00:00 AM
Abstract :
We report some instability phenomena of modulation-doped field effect transistors (MODFET´s). It can be caused by traps or by high-frequency oscillations. By the improvement of technology to reduce the trap density and careful circuit layout we can reduce the noise level in the high drain voltage region.
Keywords :
Density estimation robust algorithm; Frequency; Grounding; HEMTs; Hysteresis; MODFET circuits; Noise level; Noise measurement; Semiconductor device noise; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21712
