Title :
Generation function in uniformly multiplying avalanche diode
Author :
Chakraborti, Nirmal B. ; Rakshit, Sambhu
Author_Institution :
Indian Institute of Technology, Kharagpur, India
fDate :
9/1/1984 12:00:00 AM
Abstract :
A simple method of finding generating function in uniformly multiplying avalanche diodes has been presented. Explicit expression for such functions has been obtained for some useful values of the ionization rate ratios. The application of the result in finding the pdf of a filtered avalanche process has been discussed.
Keywords :
Charge carrier processes; Diodes; Electrons; Frequency; HEMTs; Ionization; MODFET circuits; Molecular beam epitaxial growth; Noise level; Space technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1984.21713
