DocumentCode
1093791
Title
Piezoelectric effects in GaAs FET´s and their role in orientation-dependent device characteristics
Author
Asbeck, Peter M. ; Lee, Chien-Ping ; Chang, Mau-Chung Frank ; Chang, Mau-Chung F.
Author_Institution
Rockwell International, Thousand Oaks, CA
Volume
31
Issue
10
fYear
1984
fDate
10/1/1984 12:00:00 AM
Firstpage
1377
Lastpage
1380
Abstract
Elastic stresses are frequently induced in GaAs substrates during the fabrication of FET´s, particulariy in the vicinity of windows in dielectric overlayers. It is shown here that these stresses can produce piezoelectric charge densities of such magnitude to appreciably shift the pinchoff voltage and saturation current of FET´s. These shifts are of opposite sign for FET´s oriented along [011] and [011] directions on
Keywords
Dielectrics; Doping; Electrons; FETs; Gallium arsenide; Monitoring; Piezoelectric effect; Piezoelectric polarization; Research and development; Stress;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1984.21719
Filename
1484004
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